MOVPE growth optimization of high quality InGaN films.
نویسندگان
چکیده
منابع مشابه
MOVPE Growth of Semipolar GaN on Patterned Sapphire Wafers: Growth Optimisation and InGaN Quantum Wells
We are able to achieve two different GaN semipolar surfaces by growing on patterned sapphire substrates: (101̄1) GaN on (112̄3) sapphire and (112̄2) on (101̄2). By this approach, the growth of a coalesced semipolar layer on a large area of about two inches diameter is possible. Well known from the c-plane direction, an in-situ deposited SiN interlayer could reduce the defect density also in semipol...
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The growth of high-quality thick InN films is challenging because of the lack of native substrates. In this work, we demonstrate the use of a linearly graded InGaN buffer layer for the growth of InN films on GaN substrates. A 500nm InN film with <0.1 nm RMS roughness is obtained with a peak mobility of 1410 cm2/(V&s) at 300K. A strong room temperature photoluminescence showing a bandgap of 0.65...
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Pen-Hsiu Chang , N.C. Chen, Chin-An Chang1, Hsian-Chu Peng, Chuang-Feng Shih, KuoShung Liu, Shih-Kai Lin, Kun-Ta Wu, Shang-Chia Chen, Chao-Ping Huang, Hong-Syuan Wang, Pu-Tai Yang, C.-T. Liang, Y.H. Chang and Y.F. Chen Institute of Electro-Optical Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan Department of Materials Science and Engineering, National Tsing Hua University, H...
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AlGaN layers grown directly on sapphire typically experience fairly strong biaxial compressive strain [1] which leads to a large number of threading dislocations (TDs) — mainly misfit TDs. These mainly occur in the form of edge/mixed type TDs. They cause very broad asymmetric high resolution X-ray diffraction (HRXRD) reflections, e.g. (102)reflexes [2]. On the other hand, screw/mixed type dislo...
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The growth mechanism of GaAs nanowires (NWs) grown on polycrystalline silicon (poly-Si) thin films using selective-area metalorganic vapor-phase epitaxy was investigated. Wire structures were selectively grown in the mask openings on a poly-Si substrate. The appearance ratio of wire structures strongly depended on the growth conditions and deposition temperature of the poly-Si substrate. Evalua...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1997
ISSN: 1092-5783
DOI: 10.1557/s1092578300001423